Plasma anodization of silicon at room temperature
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چکیده
2014 Room temperature plasma anodization of silicon (growth rate of a few nm/min.) is possible through a thin calcia stabilized zirconia (CSZ) layer. The anodization kinetics, the composition and the electrical properties of the anodic SiO2 films are studied. Constant voltage or low current anodization lead to quasi defect free films with reduced surface roughness. The dielectric breakdown field of as grown SiO2 is about 5 x 106 V/cm. The minimum of density of traps at the SiO2/Si interface is in the 1010-1011 cm-2. eV-1 range after hydrogen annealing at 470 °C for 30 min. This is comparable to high temperature (above 400 °C) plasma grown SiO2. The protective filter effect of the CSZ against contamination has also been demonstrated. In addition, thick (above 0.3 03BCm) SiO2 layers can be obtained in a reasonable time (about 30 min.) at moderate temperatures. Revue Phys. Appl. 16 (1981) -424 AOÛT 1981, PAGE 419
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